Effects of carrier concentration and phonon energy on carrier lifetime in type-2 SLS and properties of InAs1-XSbX alloys
Effects of carrier concentration and phonon energy on carrier lifetime in type-2 SLS and properties of InAs1-XSbX alloys
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DOI：
10.1117/12.883625
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发表时间：
2011-05
期刊：
影响因子：
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通讯作者：
G. Belenky;G. Kipshidze;D. Donetsky;S. Svensson;W. Sarney;H. Hier;L. Shterengas;D. Wang;Y. Lin
中科院分区：
文献类型：
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作者：
G. Belenky;G. Kipshidze;D. Donetsky;S. Svensson;W. Sarney;H. Hier;L. Shterengas;D. Wang;Y. Lin
通过 MBE 在 GaSb 上生长的 GaInSb 和 AlGaInSb 成分梯度缓冲层用于开发未松弛的 InAs1-XSbX 外延层，其晶格常数比 GaSb 大 2.1%。 InAsSb缓冲层用于在InSb上生长InAs0.12Sb0.88层。 1μm 厚的 InAs1-xSbx 层的结构和光学表征以及载流子寿命的测量一起进行。
GaInSb and AlGaInSb compositionally graded buffer layers grown on GaSb by MBE were used to develop unrelaxed InAs1-XSbXepilayers with lattice constants up to 2.1 % larger than that of GaSb. The InAsSb buffer layer was used to grow InAs0.12Sb0.88 layer on InSb. The structural and optical characterization of 1-μm thick InAs1-xSbx layers was performed together with measurements of the carrier lifetime.