Accurate Capacitance Modeling and Characterization of Organic Thin-Film Transistors
Accurate Capacitance Modeling and Characterization of Organic Thin-Film Transistors
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DOI：
10.1109/ted.2013.2292390
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发表时间：
2014-01-01
影响因子：
3.1
通讯作者：
Burghartz, Joachim N.
中科院分区：
文献类型：
--
作者：
Zaki, Tarek;Scheinert, Susanne;Burghartz, Joachim N.
本文采用导纳表征、紧凑建模和二维器件仿真等方法分析了有机薄膜晶体管（OTFTs）中的电荷存储行为。测量频率范围为100 Hz至1 MHz，偏置电位范围为0至-3 V，采用空气稳定和高迁移率的二噻吩-噻吩作为有机半导体的顶接触otft。结果表明，本征OTFT栅源和栅漏电容与外加电压的关系与Meyer的电容模型非常吻合。此外，还研究了寄生元件的影响，包括条纹电流和接触阻抗。用于模拟和建模所有动态特性的参数与从静态测量中提取的参数非常接近。最后，还讨论了导纳测量对OTFTs动态性能的影响，特别是截止频率和电荷响应时间。
This paper presents analysis of the charge storage behavior in organic thin-film transistors (OTFTs) by means of admittance characterization, compact modeling, and 2-D device simulation. The measurements are performed for frequencies ranging from 100 Hz to 1 MHz and bias potentials from zero to -3 V on top-contact OTFTs that employ air-stable and high-mobility dinaphtho-thieno-thiophene as the organic semiconductor. It is demonstrated that the dependence of the intrinsic OTFT gate-source and gate-drain capacitances on the applied voltages agrees very well with Meyer's capacitance model. Furthermore, the impact of parasitic elements, including fringe current and contact impedance, is investigated. The parameters used for the simulation and modeling of all the dynamic characteristics correspond closely to those extracted from static measurements. Finally, the implications of the admittance measurements are also discussed relating to the OTFTs dynamic performance, particularly the cutoff frequency and the charge response time.