Low-Temperature Growth of ZnSe by Photoassisted Molecular Beam Epitaxy
Low-Temperature Growth of ZnSe by Photoassisted Molecular Beam Epitaxy
复制标题
光辅助分子束外延低温生长硒化锌
DOI：
10.1143/jjap.29.l1585
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发表时间：
1990
期刊：
影响因子：
--
通讯作者：
J. Saraie
中科院分区：
文献类型：
--
作者：
T. Fukada;N. Matsumura;Y. Fukushima;J. Saraie
利用光辅助分子束外延技术首次在150°C低温下成功地生长了ZnSe外延层。使用强度为约300 mW/cm 2的He-Cd激光器（441.6 nm）作为光源。在11 K下的光致发光光谱中的自由激子线是尖锐的和强的，与在340°C下生长的未照射的外延层的自由激子线相当，340°C是未照射的最佳生长温度。
ZnSe epilayers have been successfully grown at a low temperature of 150°C for the first time by photoassisted molecular beam epitaxy. A He-Cd laser (441.6 nm) with an intensity of about 300 mW/cm2 was used as a light source. The free-exciton line in photoluminescence spectra at 11 K was sharp and strong, comparable with that of unirradiated epilayers grown at 340°C which is the optimum growth temperature without irradiation.