High-efficiency graphene/Si nanoarray Schottky junction solar cells via surface modification and graphene doping
High-efficiency graphene/Si nanoarray Schottky junction solar cells via surface modification and graphene doping
复制标题
通过表面修饰和石墨烯掺杂的高效石墨烯/硅纳米阵列肖特基结太阳能电池
DOI：
10.1039/c3ta10203c
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发表时间：
2013-01-01
影响因子：
11.9
通讯作者：
Zhang, Wenjun
中科院分区：
文献类型：
--
作者：
Zhang, Xiaozhen;Xie, Chao;Zhang, Wenjun
目前的硅基光伏器件需要高质量的原材料和复杂的加工技术来构建复杂的器件结构;因此，进一步提高效率和大幅降低成本是非常期望的，以促进其广泛应用。在这项工作中，我们进行了全面的研究，高效率的石墨烯/硅纳米阵列肖特基结太阳能电池。除了Si纳米线（SiNW）阵列之外，Si纳米孔（SiNH）阵列首次用于器件构造，因为它在保留增强的光吸收的同时显示出更大的有效结面积方面的优势。研究发现，表面电荷复合以及石墨烯导电性和功函数在决定太阳能电池性能方面起着重要作用。通过适当的表面钝化抑制表面复合，再加上石墨烯层数和掺杂水平的仔细控制，我们发现，器件性能可以显着提高。最后，通过插入一个薄的导电聚合物聚（3-己基噻吩）（P3 HT）作为硅纳米阵列和石墨烯薄膜之间的电子阻挡层，最大功率转换效率（PCE）的8.71%和10.30%，分别被证明为基于SiNW和SiNH阵列的设备，作为减少在阳极中的载流子复合的结果。这项工作中展示的PCE是迄今为止石墨烯/Si纳米阵列太阳能电池所达到的最高值。目前的研究结果表明，石墨烯/硅纳米阵列作为高效率和低成本的光伏器件的巨大潜力。
The current Si-based photovoltaic devices require high-quality raw materials and intricate processing techniques to construct complex device structures; further improvement in efficiency and a drastic decrease in cost are thus highly desired to promote their extensive applications. In this work, we conducted a comprehensive study on high-efficiency graphene/Si nanoarray Schottky junction solar cells. Besides the Si nanowire (SiNW) array, a Si nanohole (SiNH) array was first used for the device construction since it showed the advantages in terms of larger effective junction area while enhanced light absorption is retained. It was found that surface charge recombination as well as graphene conductivity and work function played important roles in determining the solar cell performance. By suppressing the surface recombination with appropriate surface passivation, together with the careful control of the graphene layer number and the doping level, we found that the device performance can be significantly improved. Eventually, by inserting a thin conducting polymer poly(3-hexylthiophene) (P3HT) as the electron blocking layer between Si nanoarrays and graphene films, maximum power conversion efficiencies (PCEs) of 8.71% and 10.30% were demonstrated for the devices based on SiNW and SiNH arrays, respectively, as a result of reduced carrier recombination in the anode. The PCEs demonstrated in this work are the highest values achieved thus far for the graphene/Si nanoarray solar cells. The present results suggest great potential of the graphene/Si nanoarrays as high-efficiency and low-cost photovoltaic devices.