In situ instant generation of an ultrabroadband near-infrared emission center in bismuth-doped borosilicate glasses via a femtosecond laser

In situ instant generation of an ultrabroadband near-infrared emission center in bismuth-doped borosilicate glasses via a femtosecond laser
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DOI:
10.1364/prj.7.000300
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发表时间:
2019-02
期刊:
影响因子:
7.6
通讯作者:
Liping Wang;Jiangkun Cao;Yao Lu;Xiaoman Li;Shanhui Xu;Qinyuan Zhang;Zhongmin Yang;M. Peng
Liping Wang;Jiangkun Cao;Yao Lu;Xiaoman Li;Shanhui Xu;Qinyuan Zhang;Zhongmin Yang;M. Peng
中科院分区:
物理与天体物理1区
文献类型:
--
作者:
Liping Wang;Jiangkun Cao;Yao Lu;Xiaoman Li;Shanhui Xu;Qinyuan Zhang;Zhongmin Yang;M. Peng

文献摘要

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掺铋(Bi)光子材料具有宽带近红外(1000-1600 nm)发光特性,正在发展成为一种有趣的增益介质。然而,传统的方法在增强铋的近红外发射方面已经显示出其局限性,特别是在微区。因此,在掺铋光波导中很少有典型的近红外发射,这严重限制了铋激活材料的应用。在这里,利用飞秒激光在硼硅酸盐玻璃内部原位诱导超宽带BiNIR发射。通过一系列的结构和光谱表征,探讨了其产生机理。我们还展示了这种新型的在光栅区的近红外发射是如何显著增强和可逆擦除的。此外,我们还成功地演示了双激活光波导器件。这些结果为掺铋材料的研究提供了新的思路,推动了宽带光波导放大技术的发展。
Bismuth (Bi)-doped photonic materials, which exhibit broadband near-infrared (NIR) luminescence (1000–1600 nm), are evolving into interesting gain media. However, the traditional methods have shown their limitations in enhancing Bi NIR emission, especially in the microregion. Consequently, the typical NIR emission has seldom been achieved in Bi-doped waveguides, which highly restricts the application of Bi-activated materials. Here, superbroadband Bi NIR emission is induced in situ instantly in the grating region by a femtosecond (fs) laser inside borosilicate glasses. A series of structural and spectroscopic characterizations are summoned to probe the generation mechanism. And we show how this novel NIR emission in the grating region can be enhanced significantly and erased reversibly. Furthermore, we successfully demonstrate Bi-activated optical waveguides. These results present new insights into Bi-doped materials and push the development of broadband waveguide amplification.