Understanding of strain effects on high-field carrier velocity in (100) and (110) CMOSFETs under quasi-ballistic transport
Understanding of strain effects on high-field carrier velocity in (100) and (110) CMOSFETs under quasi-ballistic transport
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了解准弹道输运下 (100) 和 (110) CMOSFET 中应变对高场载流子速度的影响
DOI：
10.1109/iedm.2009.5424318
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发表时间：
2009
期刊：
影响因子：
--
通讯作者：
T. Numata
中科院分区：
文献类型：
--
作者：
M. Saitoh;N. Yasutake;Y. Nakabayashi;K. Uchida;T. Numata
通过衬底弯曲实验，系统地研究了应变对(100)和(110)短沟n/pFET高场载流子速度(V)的影响。应变引起的V和I<；增加不仅取决于低场迁移率(μ)增强(Δμ/μ)，而且还取决于饱和速度的调制(v<；Inf&>Sat<；/Inf&>t；)。研究发现，在较小的Δμ/μ器件中，V<；Inf>；Sat<；/Inf>；随应变增加的幅度更大。Δμ/μ的差额通过v<；inf&>Sat<；/inf&>；变化来补偿。结果表明，(10 0)/(110)n/pFET的Δv/v集中在亚30 nm区域。在高度紧张的条件下，在I<；inf>；/inf>；和i<；inf>；dsat<；/inf>；方面，(110)cmos相对于(100)cmos的优势保持不变。
We systematically study the strain effects on high-field carrier velocity (v) in (100) and (110) short-channel n/pFETs by means of substrate bending experiment. v and I<inf>dsat</inf> increase by strain is determined not only by low-field mobility (μ) enhancement (Δμ/μ) but also by the modulation of saturation velocity (v<inf>sat</inf>). It is found that v<inf>sat</inf> increases more by strain in smaller-Δμ/μ devices. The difference of Δμ/μ is compensated by v<inf>sat</inf> change. As a result, Δv/v of (100)/(110) n/pFETs converge in sub-30nm regime. The superiority of (110) CMOS to (100) CMOS is maintained in terms of both I<inf>dlin</inf> and I<inf>dsat</inf> at highly-strained conditions.