Tris-(8-hydroxyquinoline)aluminum-modified indium tin oxide for enhancing the efficiency and reliability of organic light-emitting devices
Tris-(8-hydroxyquinoline)aluminum-modified indium tin oxide for enhancing the efficiency and reliability of organic light-emitting devices
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DOI：
10.1063/1.1815374
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发表时间：
2004-11
影响因子：
4
通讯作者：
Yoon-Fei Liew;F. Zhu;S. Chua;Jianxin Tang
中科院分区：
文献类型：
--
作者：
Yoon-Fei Liew;F. Zhu;S. Chua;Jianxin Tang
研究了有机电致发光器件(OLED)的电子传输材料--三(8-羟基喹啉)铝(Alq3)对有机电致发光器件的阳极修饰。用紫外光电子能谱研究了改进载流子注入的氧化铟锡(ITO)/有机界面的电子结构。界面分析表明，ITO/有机界面的势垒高度可在∼0.6-1.08 eV范围内变化。结果表明，可以通过插入几纳米厚的超薄Alq3中间层来构建从ITO阳极到空穴传输层的空穴注入势垒。Alq3过渡层的存在改善了电流平衡，提高了OLED的电致发光效率和工作稳定性。
Tris-(8-hydroxyquinoline)aluminum (Alq3), which is typically used as an electron transport material for organic light-emitting devices (OLEDs), was used in this study for OLED anode modification. The electronic structure at the indium tin oxide (ITO)/organic interface for improvement of carrier injection was studied using ultraviolet photoelectron spectroscopy. The interfacial analysis reveals that the barrier height at the ITO/organic interface can be varied from ∼0.6–1.08eV. It is demonstrated that the barrier for hole injection from an ITO anode to a hole transporting layer can be engineered by inserting an ultrathin interlayer of Alq3, a few nanometers thick. The presence of an Alq3 interlayer is shown to improve the current balance, leading to an enhancement in the electroluminecent efficiency and operational stability of OLEDs.