Improved device performance using a semi-transparent p-contact AlGaN/GaN heterojunction positive-intrinsic-negative photodiode
Improved device performance using a semi-transparent p-contact AlGaN/GaN heterojunction positive-intrinsic-negative photodiode
复制标题
DOI：
10.1063/1.124942
复制
发表时间：
1999-09
影响因子：
4
通讯作者：
C. Collins;T. Li;A. Beck;R. Dupuis;J. Campbell;J. Carrano;M. Schurman;I. Ferguson
中科院分区：
文献类型：
--
作者：
C. Collins;T. Li;A. Beck;R. Dupuis;J. Campbell;J. Carrano;M. Schurman;I. Ferguson
我们报告的GaN基紫外异质结光电二极管使用半透明的p接触器件结构的改善的器件性能。在10 V的反向偏压下，这些光电二极管表现出0.3 nA/cm 2的低暗电流密度。外量子效率在带边为38%，在较短波长处仅略有下降。Vf=5 V时，正向电流>10 mA。将正向电流-电压数据拟合到二极管方程中，可得到非常低的串联电阻（Rs=62Ω），从而导致时间响应的快速衰减。由薄的半透明p接触层提供的改进的性能是由于横向场分布的均匀性的增加。
We report on the improved device performance of GaN-based ultraviolet heterojunction photodiodes using a semi-transparent p-contact device structure. At a reverse bias of 10 V, these photodiodes exhibit a low dark current density of 0.3 nA/cm2. The external quantum efficiency is 38% at the band edge, with only a slight decrease at the shorter wavelengths. The forward current is >10 mA at Vf=5 V. Fitting of the forward current–voltage data to the diode equation yields a very low series resistance (Rs=62Ω), which results in a very fast decay of the time response. The improved performance afforded by the thin, semi-transparent, p-contact layer is due to an increase in the uniformity of the lateral field distribution.