Embossable grating couplers for planar evanescent wave sensors
Embossable grating couplers for planar evanescent wave sensors
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DOI：
10.2478/s11772-010-0056-1
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发表时间：
2011-03-01
影响因子：
1.6
通讯作者：
Karasinski, P.
中科院分区：
文献类型：
--
作者：
Karasinski, P.
本文介绍了一种用于平面倏逝波传感器的输入光栅耦合器。采用溶胶-凝胶法制备了SiO2：TiO 2光波导薄膜，并采用在溶胶膜中模压光栅母版的方法制备了沟槽密度为1000 g/mm和2400 g/mm的光栅耦合器。给出了覆盖层折射率对入射角的影响。根据实验结果，确定了所研究的平面结构的检测限，包括有效折射率和覆盖层折射率的变化。具有凹槽密度为1000 g/mm的耦合器的传感器结构能够检测低于3.3 x 10（-7）的有效折射率的最小变化，并且能够检测低于2.3 x 10（-6）的盖的折射率的最小变化。具有沟槽密度为2400 g/mm的耦合器的结构的检测极限高两倍以上。
The paper presents input grating couplers to be applied in planar evanescent wave sensors. Waveguide films SiO2:TiO2 were obtained using the sol-gel method, and grating couplers with a groove density of 1000 g/mm and 2400 g/mm were produced using the method of master grating embossing in sol film. The influence of refractive index of the cover on incoupling angles was presented. Basing on the experimental results, detection limits involving the changes of effective indexes and refractive indexes of the cover for the investigated planar structures were determined. Sensor structures with the couplers having a groove density of 1000 g/mm enable to detect minimum changes of the effective index below 3.3 x 10(-7) and to detect minimum changes of refractive index of the cover below 2.3 x 10(-6). Detection limits for the structures with couplers having the groove density of 2400 g/mm are over twofold higher.