Intrinsic Topological Insulator Bi2Te3 Thin Films on Si and Their Thickness Limit
Intrinsic Topological Insulator Bi2Te3 Thin Films on Si and Their Thickness Limit
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DOI：
10.1002/adma.201000368
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发表时间：
2010-11-22
影响因子：
29.4
通讯作者：
Xue, Qi-Kun
中科院分区：
文献类型：
--
作者：
Li, Yao-Yi;Wang, Guang;Xue, Qi-Kun
采用分子束外延技术可以在Si衬底上生长出高质量的Bi_2Te_3薄膜。原位角分辨光电子能谱测量表明，薄膜是本征拓扑绝缘体，在两个五层厚度处形成单狄拉克锥表面态。这项工作为基于成熟的硅技术的拓扑材料工程开辟了一条新途径。
High-quality Bi2Te3 films can be grown on Si by the state-of-art molecular beam epitaxy technique. In situ angle-resolved photo-emission spectroscopy measurement reveals that the as-grown films are intrinsic topological insulators and the single-Dirac-cone surface state develops at a thickness of two quintuple layers. The work opens a new avenue for engineering of topological materials based on well-developed Si technology.