Separation of bulk and interface contributions to electroforming and resistive switching behavior of epitaxial Fe-doped SrTiO3
Separation of bulk and interface contributions to electroforming and resistive switching behavior of epitaxial Fe-doped SrTiO3
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DOI：
10.1063/1.3100209
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发表时间：
2009-03-15
影响因子：
3.2
通讯作者：
Waser, R.
中科院分区：
文献类型：
--
作者：
Menke, T.;Meuffels, P.;Waser, R.
通过交流阻抗谱的研究，成功地分离了铂/STO(Fe)/Nb：STO器件的电铸和电阻开关行为中的体相和界面相成分。在阻抗谱中观察到的两个明显特征可以归结为STO(Fe)块体和铂/STO(Fe)肖特基接触的耗尽层。我们将DC形成过程中的电阻变化归因于氧向环境渗漏导致的耗尽层的局部旁路。通过比较电阻“开”态和“关”态的阻抗谱，我们认为STO(Fe)/Nb：STO界面的电阻在开关过程中发生了局部变化。
We succeeded in the separation of bulk and interface contributions to the electroforming and resistive switching behavior of Pt/STO(Fe)/Nb:STO devices by performing impedance spectroscopy. Two distinctive features observed in the impedance spectra could be assigned to the STO(Fe) bulk and to the depletion layer of the Pt/STO(Fe) Schottky contact. We attribute the resistance change during the dc forming process to a local bypassing of the depletion layer caused by oxygen effusion to the environment. By comparing the impedance spectra in the resistive "on" and "off" states, we propose that the resistance of the STO(Fe)/Nb:STO interface locally changes during the switching process.