Sub-20 nm silicon patterning and metal lift-off using thermal scanning probe lithography
Sub-20 nm silicon patterning and metal lift-off using thermal scanning probe lithography
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DOI：
10.1116/1.4901413
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发表时间：
2015-03-01
影响因子：
1.4
通讯作者：
Knoll, Armin W.
中科院分区：
文献类型：
--
作者：
Wolf, Heiko;Rawlings, Colin;Knoll, Armin W.
图案化工艺的分辨率的最直接定义是能够转移到衬底上的最小半间距特征。在这里，作者证明，热扫描探针光刻（t-SPL）是能够制造密集的线图案在硅和金属剥离功能在20纳米以下的特征尺寸。通过t-SPL将密集硅线以18.3nm的半节距写入9nm的聚邻苯二甲醛热成像层中至5nm的深度。对于处理，作者使用了三层堆叠，包括蒸发的SiO2硬掩模，其厚度仅为2 - 3 nm。硬掩模用于将图案放大成50 nm厚的聚合物转移层。转移层随后用作蚀刻掩模，用于转移到硅中大约65 nm的深度。线边缘粗糙度（3 σ）被评估为在转移层和硅中均小于3nm。作者还证明，类似的三层堆叠可用于高分辨率图案的金属剥离。通过在InAs纳米线上制造50 nm半间距致密镍接触来演示器件应用。(C)2014年美国真空学会。
The most direct definition of a patterning process' resolution is the smallest half-pitch feature that is capable of transferring onto the substrate. Here, the authors demonstrate that thermal scanning probe lithography (t-SPL) is capable of fabricating dense line patterns in silicon and metal lift-off features at sub-20 nm feature size. The dense silicon lines were written at a half pitch of 18.3 nm to a depth of 5 nm into a 9 nm polyphthalaldehyde thermal imaging layer by t-SPL. For processing, the authors used a three-layer stack comprising an evaporated SiO2 hardmask, which is just 2-3 nm thick. The hardmask is used to amplify the pattern into a 50 nm thick polymeric transfer layer. The transfer layer subsequently serves as an etch mask for transfer into silicon to a depth of approximate to 65 nm. The line edge roughness (3 sigma) was evaluated to be less than 3 nm both in the transfer layer and in silicon. The authors also demonstrate that a similar three-layer stack can be used for metal lift-off of high resolution patterns. A device application is demonstrated by fabricating 50 nm half pitch dense nickel contacts to an InAs nanowire. (C) 2014 American Vacuum Society.