Comparison of SiO2 and AIN as Gate Dielectric for SiC MOS Structures
Comparison of SiO2 and AIN as Gate Dielectric for SiC MOS Structures
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SiO2 和 AIN 作为 SiC MOS 结构栅极电介质的比较
DOI：
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发表时间：
1997
期刊：
影响因子：
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通讯作者：
M. Spencer
中科院分区：
文献类型：
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作者：
C. Zetterling;M. Östling;C. Harris;N. Nordell;K. Wongchotigul;M. Spencer
比较了二氧化硅(热氧化)和氮化铝(金属有机化学气相沉积)作为碳化硅金属绝缘体半导体结构栅电介质的电学性能。在室温下用高频电容电压测量研究了固定电荷和深界面态。在二氧化硅生长过程中引入氢气可以使深界面态钝化。尽管氮化铝的结果很有希望，但到目前为止生长的薄膜的形貌还不能与二氧化硅进行公平的比较。
The electrical properties of silicon dioxide (thermal oxidation) and aluminum nitride (metal organic chemical vapor deposition) have been compared for use as gate dielectric for silicon carbide metal insulator semiconductor structures. High frequency capacitance voltage measurements at room temperature were used to investigate fixed charge and deep interface states. The deep interface states could be passivated with hydrogen if introduced during growth of silicon dioxide. Although results are promising for aluminum nitride, the morphology of the films grown so far do not allow a fair comparison with silicon dioxide.