An ultralow-capacitance bidirectional punch-through transient voltage suppressor
An ultralow-capacitance bidirectional punch-through transient voltage suppressor
复制标题
一种超低电容双向穿通瞬态电压抑制器
DOI：
10.1002/tee.22293
复制
发表时间：
2016
影响因子：
1
通讯作者：
Yu Zhihui
中科院分区：
文献类型：
--
作者：
Zeng Jie;Jin Hao;Guo Wei;Dong Shurong;Wang Weihuai;Yu Zhihui
A bidirectional punch‐through transient voltage suppressor based on a five‐layer N++P+PP+N++structure is developed. By realizing the device using a 12‐finger layout, transmission line pulse measurements indicate that the device has met the IEC61000‐4‐2 standard with electrostatic discharge robustness of ±8 kV and has an ultralow capacitance value of less than 0.17 pF. Under 3.3 V forward or reverse bias, the device exhibits a leakage current of less than 2 nA. These excellent figures suggest that the developed structure is well suited for actual system‐level protection applications. © 2016 Institute of Electrical Engineers of Japan. Published by John Wiley & Sons, Inc.
