VUV-Sensitive Silicon Photomultipliers for Xenon Scintillation Light Detection in nEXO
VUV-Sensitive Silicon Photomultipliers for Xenon Scintillation Light Detection in nEXO
复制标题
用于 nEXO 中氙闪烁光检测的 VUV 敏感硅光电倍增管
DOI：
10.1109/tns.2018.2875668
复制
发表时间：
2018-11-01
影响因子：
1.8
通讯作者：
Zhou, Y.
中科院分区：
文献类型：
--
作者：
Jamil, A.;Ziegler, T.;Zhou, Y.
未来的吨级液化惰性气体探测器取决于真空紫外范围内的有效光探测。在过去的几年中，硅光电倍增管（SiPM）已经成为标准光电倍增管或大面积雪崩光电二极管的有效替代品。下一代双β衰变实验nEXO将使用5吨液体氙时间投影室，使用SiPM探测175 nm氙闪烁光，以实现$\boldsymbol {\sigma }/\boldsymbol {Q_{\beta \beta }} = 1$ %的能量分辨率。本文介绍了最近的测量VUV-HD代SiPM从布鲁诺凯斯勒基金会，特伦托，意大利，在两个互补的设置。它包括测量光子探测效率（PDE）与气态氙闪烁光在真空设置和黑暗的测量在干燥的氮气设置。我们报告了与满足nEXO标准的上一代器件相比，在175 nm处改进的PDE。此外，我们提出了投影nEXO探测器的光收集和能量分辨率，可以通过使用这些SiPM实现。
Future ton-scale liquefied noble gas detectors depend on efficient light detection in the vacuum ultraviolet (VUV) range. In the past years, silicon photomultipliers (SiPMs) have emerged as a valid alternative to standard photomultiplier tubes or large-area avalanche photodiodes. The next-generation double-beta decay experiment, nEXO, with a 5-ton liquid xenon time projection chamber will use SiPMs for detecting the 175-nm xenon scintillation light, in order to achieve an energy resolution of $\boldsymbol {\sigma }/\boldsymbol {Q_{\beta \beta }} = 1$ %. This paper presents recent measurements of the VUV-HD generation SiPMs from Fondazione Bruno Kessler, Trento, Italy, in two complementary setups. It includes measurements of the photon-detection efficiency (PDE) with gaseous xenon scintillation light in a vacuum setup and dark measurements in a dry nitrogen gas setup. We report improved PDE at 175 nm compared to previous generation devices that would meet the criteria of nEXO. Furthermore, we present the projected nEXO detector light collection and energy resolution that could be achieved by using these SiPMs.