InAsP Quantum Dot-Embedded InP Nanowires toward Silicon Photonic Applications
InAsP Quantum Dot-Embedded InP Nanowires toward Silicon Photonic Applications
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DOI：
10.1021/acsami.1c21013
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发表时间：
2022-03-16
影响因子：
9.5
通讯作者：
Huffaker, Diana
中科院分区：
文献类型：
--
作者：
Chang, Ting-Yuan;Kim, Hyunseok;Huffaker, Diana
硅平台上的量子点(QD)发射器被认为是构建下一代量子光源、实现牢不可破的安全通信的一种有趣的方法。然而，集成在电信频段运行的位置控制量子点一直是一项具有挑战性的工作，这是实际应用的关键要求。在这里，我们报告了单片集成的InAsP量子点嵌入在硅上的InP纳米线中。量子点纳米线的位置通过金催化剂的光刻预先确定，并精确控制纳米线异质结构的三维几何形状。InAsP量子点与周围的InP纳米线形成原子锐利的界面，InP壳层原位钝化InP纳米线。量子点的激子(X)和双激子(XX)发射的线宽及其与功率相关的峰值强度表明，所提出的量子线结构可以用作工作在硅透明波长的非经典光源，显示出在各种量子光学和硅光子应用中的巨大潜力。
Quantum dot (QD) emitters on silicon platforms have been considered as a fascinating approach to building next-generation quantum light sources toward unbreakable secure communications. However, it has been challenging to integrate position-controlled QDs operating at the telecom band, which is a crucial requirement for practical applications. Here, we report monolithically integrated InAsP QDs embedded in InP nanowires on silicon. The positions of QD nanowires are predetermined by the lithography of gold catalysts, and the 3D geometry of nanowire heterostructures is precisely controlled. The InAsP QD forms atomically sharp interfaces with surrounding InP nanowires, which is in situ passivated by InP shells. The linewidths of the excitonic (X) and biexcitonic (XX) emissions from the QD and their powerdependent peak intensities reveal that the proposed QD-in-nanowire structure could be utilized as a non-classical light source that operates at silicon-transparent wavelengths, showing a great potential for diverse quantum optical and silicon photonic applications.