Hot isostatic pressing joining of W/CuCrZr alloy
Hot isostatic pressing joining of W/CuCrZr alloy
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发表时间：
2015
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通讯作者：
W. Qi
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作者：
W. Qi
采用热等静压技术制备了W/CuCrZr合金导流器组件模块。研究了PVD法制备的具有40 μm厚Cu涂层中间层、2 mm厚TU1 Cu片和无中间层的三种模块的界面性能。分别采用扫描电镜（SEM）、超声无损检测（NDT）设备、机械拔罐机和电子束设备（EMS-60）对试样的显微组织、焊接缺陷、抗剪强度和高热载荷（HHL）试验性能进行测试。结果表明：在（940℃，120 MPa,2 h）高温高温条件下，包覆40 μm Cu层的模块接头性能最佳，结合强度最高，无缺陷；经过入射功率密度为20 MW/m2的筛选试验，该模块也没有出现故障。因此，该工艺可作为三种工艺中制造导向器部件的最佳工艺。
The W/CuCrZr alloy divertor component module was manufactured by hot isostatic pressing(HIP) technique. The interface properties of three modules which have the interlayers with 40 μm thick Cu coating produced by PVD method,2 mm thick TU1 Cu sheet and no interlayer,respectively,were investigated. The microstructure,welding defect,shear strength and high heat load(HHL) test properties were tested by scanning electron microscope(SEM),ultrasonic nondestructive testing(NDT) equipment,mechanical cupping machine and electron beam epuipment(EMS-60),respectively. The results show that the joint performance of module with the interlayer of 40 μm thick Cu coating is the best,the highest bonding strength and free defect are achieved under the HIP condition of(940 ℃,120 MPa,2 h). After the screening test with incident power density of 20 MW/m2,the module also has no failure. Therefore,the process can be the optimal technique applied to the manufacturing of divertor component among the three techniques.