Annealing to achieve lower resistivity in Ga-doped ZnO epitaxial films grown from low-temperature aqueous solution
Annealing to achieve lower resistivity in Ga-doped ZnO epitaxial films grown from low-temperature aqueous solution
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DOI：
10.1016/j.matchemphys.2017.01.018
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发表时间：
2017-04-01
影响因子：
4.6
通讯作者：
Hirato, Tetsuji
中科院分区：
文献类型：
--
作者：
Miyake, Masao;Inudo, Shota;Hirato, Tetsuji
研究了不同退火条件对低温水溶液中生长的掺镓ZnO（ZnO：Ga）外延薄膜导电性能的影响。随着退火温度的升高，薄膜的电阻率降低，同时载流子浓度和迁移率也随之增加。然而，从0.5小时退火获得的改善是有限的，因为当温度超过类似于300 ℃时膜剥落。薄膜发生剥落的温度与退火气氛有关，在5%H-2-Ar气氛中发生剥落的温度低于空气和真空气氛。热脱附光谱表明，剥落的原因是驱逐的水蒸气从内部的膜，表明水分子或氢氧化物被纳入到晶体在薄膜生长过程中。随着退火时间的增加，在电性能的变化分析表明，电性能迅速提高后，在膜剥落加热。因此，通过将退火持续时间限制在可见光谱中的75%。(C)2017爱思唯尔B. V.保留所有权利。
Various annealing conditions were examined for enhancing the electrical conductivity of gallium-doped ZnO (ZnO:Ga) epitaxial films grown from a low-temperature aqueous solution. The resistivity of the films decreased with increasing annealing temperature, accompanying increases in both the carrier concentration and mobility. However, the improvement obtained from 0.5 h of annealing was limited because the films spalled when the temperature exceeded similar to 300 degrees C. The temperature at which spalling of the films occurred depended on the annealing atmosphere, and it was lower in 5%H-2-Ar than in air or vacuum. Thermal desorption spectroscopy showed that the cause of spalling was expulsion of H2O vapor from the interior of the film, indicating that water molecules or hydroxides were incorporated into the crystal during film growth. Analysis of the variations in electrical properties with increasing annealing duration revealed that the electrical properties were quickly improved upon heating before the film spalled. Thus, by limiting the annealing duration to 75% in the visible spectrum. (C) 2017 Elsevier B.V. All rights reserved.