Enhanced performances of CMOS-MEMS thermopile infrared detectors using novel thin film stacks
Enhanced performances of CMOS-MEMS thermopile infrared detectors using novel thin film stacks
复制标题
使用新型薄膜堆栈增强 CMOS-MEMS 热电堆红外探测器的性能
DOI：
10.1016/j.infrared.2019.103058
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发表时间：
2019-11-01
影响因子：
3.3
通讯作者：
Qiao, Guanjun
中科院分区：
文献类型：
--
作者：
Hou, Haigang;Huang, Qingwei;Qiao, Guanjun
本文介绍了两种兼容cmos的微机械热电堆红外探测器的设计、制作和实验结果。采用初步的干涉吸收结构和改进的干涉吸收结构加Ge增透层来提高吸光度。仅由热电偶嵌入结构组成的参考热电堆红外探测器具有由钝化层(Si（3)N(4)和SiO2）和Al/ n多晶硅热电偶组成的特征干涉吸收结构。与参考型热电堆红外探测器相比，增反射层（Ge）修饰的热电堆红外探测器具有更高的红外吸收率和更大的冷热端温差。参考型热电堆红外探测器的响应率和比检出率分别为256.6 V W-1和1.47 × 10(8) cm Hz(1/2) W-1，而加增透层后的改进型探测器的响应率和比检出率分别为302.3 V W-1和1.73 × 10(8) cm Hz(1/2) W-1，提高了18%左右。
This paper presents the design, fabrication and experimental results of two CMOS-compatible micromachined thermopile infrared (IR) detectors. A preliminary interferometric absorber structure and modified interferometric absorber structure with Ge anti-reflection layer is used to enhance the absorptance, respectively. The reference thermopile IR detector only consisting of thermocouple embedded structure is provided with a characteristic interferometric absorber structure composed of passivation layers (Si(3)N(4 )and SiO2) and Al/Npolysilicon thermocouples. Compared to the reference thermopile IR detector, the thermopile IR detector modified by anti-reflection layer (Ge) has a higher IR absorptance and increased temperature difference between the hot and cold junctions. The responsivity and specific detectivity of the reference thermopile IR detector are similar to 256.6 V W-1 and 1.47 x 10(8) cm Hz(1/2) W-1, while those of the modified detector after applying the anti-reflection layer arrive at similar to 302.3 V W-1 and 1.73 x 10(8) cm Hz(1/2) W-1, which increase by similar to 18%.