X-Ray Radiation Effect in DRAM Retention Time
X-Ray Radiation Effect in DRAM Retention Time
复制标题
X 射线辐射对 DRAM 保留时间的影响
DOI：
10.1109/tdmr.2007.891530
复制
发表时间：
2007
影响因子：
2
通讯作者：
M. Johnston
中科院分区：
文献类型：
--
作者：
A. Ditali;M. Ma;M. Johnston
对于质量验证，x射线检查过程通常用于评估表面贴装技术（如球栅阵列和倒装芯片）中模糊和有缺陷的焊点。集成电路受到任何形式的辐射，即电离或非电离，都可能造成一定程度的损害，这取决于吸收的剂量。虽然大多数用于高质量成像的x射线检查需要的电离剂量被认为对设备故障或无功能无关紧要，但必须仔细考虑潜在损伤的程度。本文讨论了高密度动态随机存取存储器暴露于x射线检测系统中典型的低电离辐射水平下的x射线引起的脆弱性。我们观察关键参数及其与不同剂量x射线照射量的敏感性。考虑到减少辐射剂量和限制设备暴露的不同方法，我们提出了一种在保持高质量图像的同时降低潜在有害x射线辐射水平的程序。
For quality verification, an X-ray inspection process is commonly being used for evaluating obscured and defective solder joints in surface-mount technologies, such as ball grid arrays and flip chips. Integrated circuits subjected to any form of radiation, i.e., ionizing or nonionizing, may incur some amount of damage depending on the absorbed dose. Though most X-ray inspections for high-quality imaging require ionizing dose amounts that are considered inconsequential for device failure or non-functionality, the degree of latent damage must be carefully considered. This paper discusses X-ray-induced vulnerabilities of high-density dynamic random access memory exposed to low ionizing radiation levels typical in X-ray inspection systems. We look at critical parameters and their sensitivity in relation to varying dose amounts of X-ray irradiation. In consideration of different methodologies of reducing radiation dose amounts and limiting device exposure, we propose a procedure for attenuating potentially harmful X-ray radiation levels while preserving quality images.