Improved performance of SiC MESFETs using double-recessed structure
Improved performance of SiC MESFETs using double-recessed structure
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DOI：
10.1016/j.mee.2005.10.054
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发表时间：
2006-01-01
影响因子：
2.3
通讯作者：
Ahn, J
中科院分区：
文献类型：
--
作者：
Zhu, CL;Rusli;Ahn, J
提出了一种双凹槽SiC MESFET，并对其电学性能进行了数值模拟研究。仿真结果表明，双凹槽结构的饱和电流比传统结构大77%左右。然而，它们的阈值电压是可比的，双凹槽和传统结构分别为-9.2和-8.4 V。双凹槽结构的输出功率密度比传统结构高37.5%，但击穿电压较低。双凹槽结构的截止频率（f(T)）和最大振荡频率（f(max)）分别为15.3 GHz和70.6 GHz，高于传统结构。因此，与基于传统结构的同类器件相比，双凹槽4H-SiC MESFET具有优越的直流和射频性能。(c) 2005 Elsevier B.V.版权所有
A double recessed SiC MESFET was proposed and its electrical performances were Studied by numerical simulation. Our simulated results showed that the saturation current of the double recessed structure is about 77% larger than that of the conventional structure. However, their threshold voltages are comparable and are -9.2 and -8.4 V for the double recessed and conventional structure, respectively. The output power density of the double recessed structure is about 37.5% larger than that of the conventional structure though its breakdown voltage is lower. The cut-off frequency (f(T)) and the maximum oscillation frequency (f(max)) of the double recessed structure are 15.3 and 70.6 GHz, respectively, which are higher than that of the conventional structure. Therefore, the double recessed 4H-SiC MESFET has superior DC and RF performances compared to the similar device based on the conventional structure. (c) 2005 Elsevier B.V. All rights reserved.