Controlled Growth of 1D MoSe2 Nanoribbons with Spatially Modulated Edge States

Controlled Growth of 1D MoSe2 Nanoribbons with Spatially Modulated Edge States
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DOI:
10.1021/acs.nanolett.6b04715
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发表时间:
2017-02-01
期刊:
影响因子:
10.8
通讯作者:
Loh, Kian Ping
Loh, Kian Ping
中科院分区:
材料科学1区
文献类型:
--
作者:
Cheng, Fang;Xu, Hai;Loh, Kian Ping

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二维(2D)过渡金属二硫属化物(TMDC)在其边缘和反转畴边界处具有有趣的一维(1D)性质,可以观察到与2D基面明显不同的性质,例如1D金属丰度和电荷密度波。虽然2D TMDC晶体广泛地通过化学气相沉积(CVD)生长,但是由于难以将生长限制在仅一维上,所以1D TMDC带的制造是具有挑战性的。在这里,我们报告的MoSe 2纳米带的控制生长的纵横比>100,通过使用预图案化的硒重建Au(100)。利用扫描隧道显微镜和光谱仪(STM/STS)研究了MoSe 2纳米带的原子和电子结构。超箭头带显示金属行为,而较宽的带显示从金属到半导体行为的交叉从边缘到中心的带。观察到的电导调制的超箭头带归因于一维莫尔图案。值得注意的是,与较宽条带中的2D莫尔图案相比,它显示出不同的周期性,表明ID系统由于边缘与基面结合的高比率而软化。此外,我们证明了纳米带对环境条件是稳定的,这表明ID TMDC可以用于进一步的应用。
Two-dimensional (2D) transition metal dichalcogenides (TMDCs) possess interesting one-dimensional (1D) properties at its edges and inversion domain boundaries, where properties markedly different from the 2D basal plane, such as 1D metallicity and charge density waves, can be observed. Although 2D TMDCs crystals are widely grown by chemical vapor deposition (CVD), the fabrication of 1D TMDCs ribbons is challenging due to the difficulty to confine growth in only one dimension. Here we report the controlled growth of MoSe2 nanoribbons with an aspect ratio >100 by using prepatterned Se reconstructions on Au(100). Using scanning tunneling microscope and spectroscopy (STM/STS), the atomic and electronic structure of MoSe2 nanoribbons are studied. The ultranarrow ribbons show metallic behavior, while wider ribbons show a crossover from metallic to semiconducting behavior going from the edge to the center of the ribbon. The observed conductance modulations of the ultranarrow ribbons are attributed to 1D Moire pattern. Remarkably, it shows a different periodicity compared with the 2D Moire pattern in wider ribbons indicating that the ID system is softened due to the high ratio of edge to basal plane bonds. Further, we demonstrated that the nanoribbons are stable against ambient conditions, which suggests that ID TMDCs can be exploited for further applications.