Charge Implantation Measurement on Electron-Irradiated Insulating Materials by Means of a SEM Technique
Charge Implantation Measurement on Electron-Irradiated Insulating Materials by Means of a SEM Technique
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利用 SEM 技术对电子辐照绝缘材料进行电荷注入测量
DOI：
10.1017/s1431927604040644
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发表时间：
2004
影响因子：
2.8
通讯作者：
S. Rondot
中科院分区：
文献类型：
--
作者：
O. Jbara;S. Fakhfakh;M. Belhaj;S. Rondot
本文的目的是首先在扫描电子显微镜(SEM)中回顾绝缘材料受到电子辐照时产生的电荷效应，然后从扫描电子显微镜和电子探针分析(EPMA)的角度对电荷效应的后果进行综述。当观察到裸绝缘子时，所谓的伪镜效应导致反常对比度，并在使用Duane-Hunt极限(DHL)方法时导致错误的表面电位VS测量。另一种可能性是使用专门改装成扫描电子显微镜的电子环光谱仪(ETS)，它直接给出VS值。对于涂有接地层的大块样品，尽管该层防止了俘获电荷的外部效应，但涂层下的电场会得到加强，并导致电离损失，从而减少产生的X射线光子的数量。为了考虑上述两种影响，提出了一种无论研究的绝缘子涂覆与否，都可以推导出绝缘子内部俘获电荷和相应的内外电场的方法。
The goal of this article is first to review the charging effects occurring when an insulating material is subjected to electron irradiation in a scanning electron microscope (SEM) and next their consequences from both scanning electron microscopy and electron probe microanalysis (EPMA) points of view. When bare insulators are observed, the so-called pseudo mirror effect leads to an anomalous contrast and also to an erroneous surface potential, VS, measurement when a Duane–Hunt limit (DHL) method is used. An alternative possibility is to use an electron toroidal spectrometer (ETS), specially adapted to a SEM, which directly gives the VS value. In the case of a bulk specimen coated with a grounded layer, although the layer prevents external effects of the trapped charge, the electric field beneath the coating is reinforced and leads to loss of ionizations that reduces the number of generated X-ray photons. To take into account both effects mentioned above, whether the studied insulator is coated or not, a method is proposed to deduce the trapped charge inside the insulator and the corresponding internal or external electric field.