Suppression of twin formation for the growth of InN(10-1-3) on GaAs(110) by metalorganic vapor phase epitaxy
Suppression of twin formation for the growth of InN(10-1-3) on GaAs(110) by metalorganic vapor phase epitaxy
复制标题
金属有机气相外延在GaAs(110)上生长InN(10-1-3)孪晶的抑制
DOI：
10.1002/pssc.201200685
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发表时间：
2012
期刊：
影响因子：
--
通讯作者：
Hisashi Murakami
中科院分区：
文献类型：
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作者：
T. Hirasaki;H. Murakami;Y. Kumagai and A. Koukitu;Hisashi Murakami
研究了载气中氢（H2）对铟在GaAs（110）上的金属有机气相外延（MOVPE）中晶体质量和双晶形成的影响。在晶体生长过程中，少量h2h的加入抑制了InN（10‐13）双晶的包裹。载气中H2in的输入分压对InN层的表面形貌也有显著影响。双晶形成的抑制和表面形貌的改善可以用H2存在时in -和N -极性InN{0001}不对称面稳定性的差异来解释。H2的引入提高了材料的电子和光学性能，这可能是由于在InN生长层中减少了氧和碳等杂质。（©2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim）
The influence of hydrogen (H2) in the carrier gas on the crystalline quality as well as twin‐crystal formation were investigated in the metalorganic vapor phase epitaxy (MOVPE) of InN on GaAs(110). The inclusion of twin crystals of InN(10‐13) was suppressed by the introduction of a small amount of H2during crystal growth. The surface morphology of the InN layer was also significantly influenced by the input partial pressure of H2in the carrier gas. The suppression of twin‐crystal formation and improvements in the surface morphology can be explained by the differences in the stability of the In‐ and N‐polar InN{0001} asymmetric planes in the presence of H2. Both electronic and optical properties were improved by the introduction of H2, which was probably due to the reduction of impurities such as oxygen and carbon in the InN grown layer. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)