Colossal electroresistance effect at metal electrode/La1−xSr1+xMnO4 interfaces
Colossal electroresistance effect at metal electrode/La1−xSr1+xMnO4 interfaces
复制标题
DOI：
10.1063/1.2208922
复制
发表时间：
2006-06
影响因子：
4
通讯作者：
Y. Tokunaga;Y. Kaneko;J. P. He;T. Arima;A. Sawa;T. Fujii;M. Kawasaki;Y. Tokura
中科院分区：
文献类型：
--
作者：
Y. Tokunaga;Y. Kaneko;J. P. He;T. Arima;A. Sawa;T. Fujii;M. Kawasaki;Y. Tokura
我们采用三探针法研究了金属电极 M（=Pt、Au、Ag、Al、Ti 和 Mg）与 La1−xSr1+xMnO4（x=0–1.0）单晶原子平坦解理（001）表面之间界面的电流-电压（I-V）特性和电阻切换。在功函数相对较浅的 M=Mg、Al 和 Ti 的结中观察到滞后 I-V 特性，表明电阻切换的出现。电阻切换比取决于空穴掺杂x，最佳掺杂浓度在x=0.5左右，验证了电阻切换特性可以通过掺杂浓度控制。
We have studied the current-voltage (I-V) characteristics and resistance switching at the interface between metal electrodes M (=Pt, Au, Ag, Al, Ti, and Mg) and atomically flat cleaved (001) surfaces of La1−xSr1+xMnO4 (x=0–1.0) single crystals by using a three-probe method. Hysteretic I-V characteristics, indicating the appearance of the resistance switching, were observed in the junctions for M=Mg, Al, and Ti, which have relatively shallow work functions. The resistance switching ratio depends on the hole doping x and the optimal doping level is around x=0.5, verifying that the resistance switching property can be controlled by the doping level.