Metal silicide Schottky barriers on Si and Ge show weaker Fermi level pinning
Metal silicide Schottky barriers on Si and Ge show weaker Fermi level pinning
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DOI：
10.1063/1.4742861
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发表时间：
2012-07-30
影响因子：
4
通讯作者：
Robertson, J.
中科院分区：
文献类型：
--
作者：
Lin, L.;Guo, Y.;Robertson, J.
实验数据和从头计算发现，金属硅化物-硅界面的费米能级钉扎比简单的金属-硅界面弱，这与肖特基势垒的标准金属诱导能隙态（MIGS）模型不一致。我们发现，这是因为硅化物界面中的MIGS不是来自Si表面悬挂键，而是来自金属“悬挂键”状态的硅化物，其能量随金属而变化。计算预测，稀土锗化物对n-Ge的势垒将非常小。(C)2012年美国物理学会。[http：//dx.doi.org/10.1063/1.4742861]
Experimental data and ab-initio calculations find that metal suicide-silicon interfaces have weaker Fermi level pinning than simple metal-Si interfaces, which is incompatible with standard metal induced gap state (MIGS) model of Schottky barriers. We show that this arises because the MIGS in silicide interfaces are not derived from Si surface dangling bonds, but from metal "dangling bond" states in the silicide, whose energies vary with the metal. Calculations predict that rare-earth germinides will have very small barriers on n-Ge. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4742861]