Output properties of C60 field-effect transistors with different source/drain electrodes
Output properties of C60 field-effect transistors with different source/drain electrodes
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DOI：
10.1063/1.2709523
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发表时间：
2007-02-19
影响因子：
4
通讯作者：
Fujiwara, Akihiko
中科院分区：
文献类型：
--
作者：
Takahashi, Nobuya;Maeda, Akira;Fujiwara, Akihiko
C-60 场效应晶体管 (FET) 采用三种不同材料的源极/漏极制造：氧化铟锡 (ITO)、Au 和 Pt。具有ITO电极的FET的高场效应迁移率mu(FE)为1.6x10(-1) cm(2)/V s，表明ITO是有机电子电极的潜在材料。尽管预期肖特基势垒最高，mu(FE)最低，但带有 Pt 电极的 FET (1.4x10(-1) cm(2)/V s) 的 mu(FE) 高于带有 Au 电极的 FET (9.6x10(-2) cm(2)/V s)。结果表明，电极和 C-60 之间界面的局部电子结构的改变会影响器件性能。 (c) 2007 年美国物理研究所。
C-60 field-effect transistors (FETs) have been fabricated with source/drain electrodes of three different materials, indium tin oxide (ITO), Au, and Pt. High field-effect mobility mu(FE) of FETs with ITO electrodes, 1.6x10(-1) cm(2)/V s, shows that ITO is a potential material for the electrodes of organic electronics. Although the highest Schottky barrier and the lowest mu(FE) were expected, mu(FE) of FET with Pt electrodes (1.4x10(-1) cm(2)/V s) is higher than that of FET with Au electrodes (9.6x10(-2) cm(2)/V s). The result suggests that modification of local electronic structure at the interface between electrodes and C-60 affects device performance. (c) 2007 American Institute of Physics.