Gate voltage tuning of spin current in Pt/yttrium iron garnet heterostructure

Gate voltage tuning of spin current in Pt/yttrium iron garnet heterostructure
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Pt/钇铁石榴石异质结中自旋电流的栅极电压调谐

DOI:
10.1088/1361-6463/ab04bc
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发表时间:
2019
期刊:
Journal of Physics D: Applied Physics
影响因子:
--
通讯作者:
Shi Zhong
Shi Zhong
中科院分区:
其他
文献类型:
--
作者:
Xu Shi Jie;Fan Xiaolong;Zhou Shi Ming;Qiu Xuepeng;Shi Zhong

文献摘要

相似文献

电子门控提供了一种多功能工具来创造新的自旋电子材料和功能。在这里,我们展示了离子液体的栅压对铂/钇铁石榴石异质结的自旋泵浦和自旋霍尔磁阻的显著调谐效应。结果表明,施加栅极电压后,界面自旋混合电导大大提高。此外,有趣的是,自旋弛豫时间也随着栅极电压的增加而增加。此外,自旋霍尔磁阻的抑制和铂原子自旋极化的增强都表明自旋霍尔角随栅极电压的增加而减小。所有这些结果都可以用增强的载流子密度和随后由栅压引起的费米能级的升高来解释。通过解决通过电压门控控制纯自旋电流的产生和传播的关键参数,本工作为提高自旋电流器件的性能提供了新的策略。
Electric gating provides a versatile tool to create new spintronic materials and functionalities. Here, we have shown significant tuning effects of the gate voltage via ionic liquid on spin pumping and spin Hall magnetoresistance in Pt/yttrium iron garnet heterostructure. It is found that the interfacial spin mixing conductance is greatly enhanced upon application of the gate voltage. In addition, and interestingly, the spin relaxation time also increases with the gate voltage. Moreover, suppressed spin Hall magnetoresistance and enhanced spin polarization of Pt atoms both suggest that the spin Hall angle is reduced by the gate voltage. All these results can be consistently explained by the enhanced charge carrier density and the subsequent elevated Fermi level induce by the gate voltage. By tackling the key parameters in controlling the generation and propagation of pure spin current via voltage gating, the present work provides novel strategies to improve the performance of the spin current devices.