Ultra-high electro-optic activity demonstrated in a silicon-organic hybrid modulator
Ultra-high electro-optic activity demonstrated in a silicon-organic hybrid modulator
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DOI：
10.1364/optica.5.000739
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发表时间：
2018-06-20
期刊：
影响因子：
10.4
通讯作者：
Koos, Christian
中科院分区：
文献类型：
--
作者：
Kieninger, Clemens;Kutuvantavida, Yasar;Koos, Christian
高效的电光(EO)调制器依赖于先进的材料，这些材料表现出强大的电光活性，并可以集成到高速高效的移相器结构中。在这篇文章中，我们展示了在硅-有机混合(SOH)马赫-曾德尔调制器(MZM)中，使用电致发光生色团JRD1获得了高达n(3)r(33)=2300 pm/V的器件内电光优值。这是迄今为止在任何工作波长的高速调制器中实现的与材料相关的最高器件内光电倍数。该1.5 mm长的器件的at电压达到210 mV，导致电压长度乘积UNL=320 Vµm，这是基于低损耗介质波导的MZM的最低值。通过在低至140 mV(Pp)的驱动电压下产生高质量的开关键控信号(40Gbit/S，Q因子超过8)，证明了该器件的可行性。我们预计，高效的高速电光调制器不仅将在光通信领域产生重大影响，还将为超快光电信号处理开辟新的途径。(C)2018年OSA开放获取出版协议条款下的美国光学学会
Efficient electro-optic (EO) modulators crucially rely on advanced materials that exhibit strong electro-optic activity and that can be integrated into high-speed and efficient phase shifter structures. In this paper, we demonstrate ultrahigh in-device EO figures of merit of up to n(3)r(33) = 2300 pm/V achieved in a silicon-organic hybrid (SOH) Mach-Zehnder modulator (MZM) using the EO chromophore JRD1. This is the highest material-related in-device EO figure of merit hitherto achieved in a high-speed modulator at any operating wavelength. The at-voltage of the 1.5-mm-long device amounts to 210 mV, leading to a voltage-length product of UnL = 320 V mu m-the lowest value reported for MZM that are based on low-loss dielectric waveguides. The viability of the devices is demonstrated by generating highquality on-off-keying signals at 40 Gbit/s with Q factors in excess of 8 at a drive voltage as low as 140 mV(pp) . We expect that efficient high-speed EO modulators will not only have a major impact in the field of optical communications, but will also open new avenues towards ultrafast photonic-electronic signal processing. (C) 2018 Optical Society of America under the terms of the OSA Open Access Publishing Agreement