Effect of spacer layer thickness on the static characteristics of resonant tunneling diodes
Effect of spacer layer thickness on the static characteristics of resonant tunneling diodes
复制标题
间隔层厚度对谐振隧道二极管静态特性的影响
DOI：
10.1063/1.103398
复制
发表时间：
1990
影响因子：
4
通讯作者：
G. Haddad
中科院分区：
文献类型：
--
作者：
I. Mehdi;R. Mains;G. Haddad
采用自洽量子力学模拟方法研究了间隔层厚度对谐振隧道二极管的峰值电流和峰谷电流比等特性的影响。当阴极掺杂较低时，峰值电流对常用的间隔层厚度不敏感。然而，对于高阴极掺杂，峰值电流随着间隔层厚度的增加而减小。这一现象是基于重掺杂阴极接触区和未掺杂双势垒区之间的结势来解释的。因此，对于需要高电流密度的器件应用，阴极间隔层应设计得尽可能薄。
A self‐consistent quantum mechanical simulation is used to study the effect of spacer layer thickness on such resonant tunneling diode properties as the peak current and peak‐to‐valley current ratio. It is found that with a low cathode doping the peak current is insensitive to the commonly used spacer layer thickness. However, for higher cathode doping the peak current decreases with increasing spacer layer thickness. This phenomenon is explained on the basis of the junction potential between the heavily doped cathode contact region and the undoped double‐barrier region. Thus, for device applications where a high current density is desired the cathode spacer layer should be designed as thin as possible.