ZnO nanoneedles grown vertically on Si substrates by non-catalytic vapor-phase epitaxy
ZnO nanoneedles grown vertically on Si substrates by non-catalytic vapor-phase epitaxy
复制标题
DOI：
10.1002/adma.200290015
复制
发表时间：
2002-12-17
影响因子：
29.4
通讯作者：
Pennycook, SJ
中科院分区：
文献类型：
--
作者：
Park, WI;Yi, GC;Pennycook, SJ
使用无催化剂的金属有机化学气相沉积（MOCVD）来制备垂直生长在Si衬底上的ZnO纳米针。电子显微镜显示，纳米针是尖锐的，具有均匀的直径，长度和密度，和高结晶度。光致发光光谱在3.29 eV处显示出强发射峰，具有非常弱的深能级发射，表明纳米针具有高光学质量。
Catalyst‐free metal–organic chemical vapor deposition(MOCVD) is used to prepare ZnO nanoneedles, grown vertically on Si substrates. Electron microscopy reveals that the nanoneedles are sharp, have uniform diameters, lengths, and densities, and high crystallinity. The photoluminescence spectrum displays a strong emission peak at 3.29 eV with a very weak deep‐level emission, indicating that the nanoneedles are of high optical quality.