Electron transport characteristics of GaN for high temperature device modeling
Electron transport characteristics of GaN for high temperature device modeling
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DOI：
10.1063/1.367269
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发表时间：
1998-05-01
影响因子：
3.2
通讯作者：
Brennan, KF
中科院分区：
文献类型：
--
作者：
Albrecht, JD;Wang, RP;Brennan, KF
Monte Carlo模拟的电子输运的基础上的分析表示的最低导带的散装，纤锌矿相GaN被用来开发一组传输参数的器件与GaN中的电子传导。球形，非抛物型导带谷的伽玛，U，M和K对称点的布里渊区的解析表达式相匹配的实验有效质量数据和赝势带结构。计算了温度在300-600 K范围内，电离杂质浓度在10（16）~ 10（18）cm（-3）范围内的低场电子漂移迁移率。补偿对流动性的影响也进行了研究。电子漂移速度高达500 kV/cm的字段计算上述温度范围内。为了帮助GaN器件建模，漂移迁移率对环境温度，施主浓度，和补偿比的依赖关系表示在解析形式与参数确定的Monte Carlo结果。还给出了峰值漂移速度和作为温度函数的速度峰值达到的场的解析形式。(C)1998年美国物理学会。
Monte Carlo simulations of electron transport based upon an analytical representation of the lowest conduction bands of bulk, wurtzite phase GaN are used to develop a set of transport parameters for devices with electron conduction in GaN. Analytic expressions for spherical, nonparabolic conduction band valleys at the Gamma, U, M, and K symmetry points of the Brillouin zone are matched to experimental effective mass data and to a pseudopotential band structure. The low-field electron drift mobility is calculated for temperatures in the range of 300-600 K and for ionized impurity concentrations between 10(16) and 10(18) cm(-3). Compensation effects on the mobility are also examined. Electron drift velocities for fields up to 500 kV/cm are calculated for the above temperature range. To aid GaN device modeling, the drift mobility dependences on ambient temperature, donor concentration, and compensation ratio are expressed in analytic form with parameters determined from the Monte Carlo results. Analytic forms are also given for the peak drift velocity and for the field at which the velocity peak is reached as functions of temperature. (C) 1998 American Institute of Physics.