The Effect of Alloying on the Bandgap Energy of Nanoscaled Semiconductor Alloys
The Effect of Alloying on the Bandgap Energy of Nanoscaled Semiconductor Alloys
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DOI：
10.1002/adfm.200700857
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发表时间：
2008-04
影响因子：
19
通讯作者：
Yongfu Zhu;X. Lang;Q. Jiang
中科院分区：
文献类型：
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作者：
Yongfu Zhu;X. Lang;Q. Jiang
基于低维半导体化合物的尺寸依赖的带隙能模型，在没有任何可调参数的情况下，对纳米级半导体的带隙的合金化效应进行建模。该模型不仅预测了带隙随晶粒尺寸减小而增大的趋势，而且还预测了当晶粒尺寸下降到接近纳米晶临界尺寸的两倍时，带隙与合金成分之间的Végard关系。该模型预测同意的准二元IIB-VIB硫族化物半导体纳米晶体的带隙变化的可用实验结果。
Based on a model for the size‐dependent bandgap energy of low‐dimensional semiconductor compounds, the alloying effect on the bandgap of nanoscale semiconductors is modeled without any adjustable parameter. The model predicts not only a trend of increasing bandgap with decreasing nanocrystal size but also Végard¢s relationship between the bandgap and the alloy composition when the size drops close to twice that of the critical size for the nanocrystals. The model predictions agree with available experimental results for bandgap changes of pseudo‐binary IIB–VIB chalcogenide semiconductor nanocrystals.