Ultra-narrow emission from single GaAs self-assembled quantum dots grown by droplet epitaxy
Ultra-narrow emission from single GaAs self-assembled quantum dots grown by droplet epitaxy
复制标题
DOI：
10.1088/0957-4484/20/39/395601
复制
发表时间：
2009-09-30
期刊：
影响因子：
3.5
通讯作者：
Gurioli, M.
中科院分区：
文献类型：
--
作者：
Mano, T.;Abbarchi, M.;Gurioli, M.
我们用改进的液滴外延技术生长了单个的GaAs/AlGaAs量子点，实现了超窄的激子发射。我们发现，未封顶的量子点可以在400℃的温度下进行热处理，而它们的形态没有太大的变化，因此能够在该温度下生长AlGaAs盖层。因此，我们证明，与传统的液滴外延量子点相比，发射的线宽减少了四倍，复合寿命增加了。用显微光致发光方法测得单个量子点上中性激子的平均线宽约为35微米eV。
We realized ultra-narrow excitonic emission from single GaAs/AlGaAs quantum dots (QDs) grown by a refined droplet epitaxy technique. We found that uncapped quantum dots can be annealed at 400 degrees C without major changes in their morphology, thus enabling an AlGaAs capping layer to be grown at that temperature. Consequently, we demonstrate a fourfold reduction of the linewidth of the emission together with an increased recombination lifetime, compared to the conventional droplet epitaxial QDs. The averaged linewidth of neutral excitons measured by micro-photoluminescence on single quantum dots was around 35 mu eV.