Effect of lead additive on the ferroelectric properties and microstructure of SrxPbyBi2zTa2O9 thin films
Effect of lead additive on the ferroelectric properties and microstructure of SrxPbyBi2zTa2O9 thin films
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DOI：
10.1063/1.373491
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发表时间：
2000-05
影响因子：
3.2
通讯作者：
San-Yuan Chen;V. Lee
中科院分区：
文献类型：
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作者：
San-Yuan Chen;V. Lee
采用金属有机分解法制备了含铋层状钙钛矿SrxPbyBi2zTa2O9的铁电薄膜。研究了Sr和Pb含量对SrxPbyBi2.3Ta2O9薄膜晶体结构、微观结构和铁电性能的影响。在800℃下制备的SrxPb0.2Bi2.3Ta2O9薄膜中，当Sr含量为20 mol %时，最大残余极化为2Pr=19.2 μC/cm2，这可能是Sr含量对BiTaO4晶粒生长和第二相形成的不利影响。在Sr0.8Pb0.2Bi2.3Ta2O9薄膜中，Pb取代Bi的同时会出现氧空位来补偿电荷平衡，这是Sr0.8Pb0.2Bi2.3Ta2O9薄膜中晶粒生长的机制。经过109次循环后，Sr0.8Bi2.3Ta2O9薄膜的疲劳耐久性出现问题，残余极化降低到原始值的85%。这种现象与电子注入和电子陷阱的产生有关。
Ferroelectric thin films of bismuth-containing layered perovskite SrxPbyBi2zTa2O9 have been prepared using the metalorganic decomposition method. The effect of both Sr and Pb content on the crystal structure, microstructure, and ferroelectric properties of SrxPbyBi2.3Ta2O9 films was investigated. A maximum remanent polarization of 2Pr=19.2 μC/cm2 was obtained for the SrxPb0.2Bi2.3Ta2O9 film with 20 mol % Sr-deficient composition as prepared at 800 °C, which could be the compromising effects of Sr content on both grain growth and second phase formation of BiTaO4. The substitution of Pb for Bi is accompanied by the occurrence of oxygen vacancies to compensate the charge balance, which is responsible for grain growth mechanism in Sr0.8Pb0.2Bi2.3Ta2O9 films. Fatigue endurance of Sr0.8Bi2.3Ta2O9 films becomes problematic after 109 cycles with a decrease in remanent polarization to 85% of the original value. This phenomenon was related to electron injection and creation of electron traps due to the occupation o...