Additional stress-induced band gap narrowing in a silicon die
Additional stress-induced band gap narrowing in a silicon die
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DOI：
10.1063/1.2833435
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发表时间：
2008-01
影响因子：
3.2
通讯作者：
M. Furuhashi;K. Taniguchi
中科院分区：
文献类型：
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作者：
M. Furuhashi;K. Taniguchi
半导体器件由于两个单独的来源（硅晶片处理和封装）而具有固有机械应力。这种内在应力导致带隙变窄，从而降低器件的可靠性。在这项工作中，硅芯片，包括浅沟槽隔离结构与额外的外部压缩，以澄清由不同因素引起的应力之间的带隙变窄的相互作用的影响。结果表明，由于外加压力引起的压力系数与p-n二极管的本征拉伸区/总拉伸区之比成线性关系。
Semiconductor devices have intrinsic mechanical stress due to two separate sources, silicon wafer processing and packaging. This intrinsic stress induces band gap narrowing and consequent degradation of device reliability. In this work, a silicon die that included shallow trench isolation structures was used with additional external compression to clarify the interaction effects on band gap narrowing between stresses induced by different factors. It was observed that the pressure coefficient due to the additional external compression is linearly dependent on the intrinsic tensile region/total region ratio of a p-n diode.