Zirconia grown by ultraviolet ozone oxidation on germanium (100) substrates
Zirconia grown by ultraviolet ozone oxidation on germanium (100) substrates
复制标题
在锗 (100) 基底上通过紫外臭氧氧化生长氧化锆
DOI：
10.1063/1.1745118
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发表时间：
2004
影响因子：
3.2
通讯作者：
P. McIntyre
中科院分区：
文献类型：
--
作者：
D. Chi;C. O. Chui;K. Saraswat;B. Triplett;P. McIntyre
本文报道了使用紫外线辐射（UV/臭氧）产生的活性氧物种通过氧化在锗（Ge）衬底上生长氧化锆（ZrO 2）基栅极电介质。在该技术中，通过物理气相沉积在Ge上沉积锆（Zr）金属（10-30 A）的薄层，随后在活性氧中氧化。X射线光电子能谱（XPS）分析表明Zr金属完全氧化。高分辨率透射电子显微镜（TEM）的紫外-臭氧氧化的ZrO 2在Ge上的氧化物和衬底之间的尖锐的界面。然而，由于Zr和Ge的原子序数接近，常规TEM不太适合于识别该系统中的Ge氧化物层。XPS光谱表明在ZrO 2/Ge界面处存在亚化学计量的Ge氧化物相。深度剖析使用角分辨XPS进行不同的氧化物厚度的ZrO 2/Ge栅堆叠。结果表明，Ge氧化物的含量取决于ZrO_2的含量。
Growth of zirconia (ZrO2)-based gate dielectrics on germanium (Ge) substrates by oxidation using activated oxygen species produced by ultraviolet radiation (UV/ozone) is reported here. In this technique, a thin layer of zirconium (Zr) metal (10–30 A) is deposited by physical vapor deposition on Ge and subsequently oxidized in reactive oxygen. X-ray photoelectron spectroscopy (XPS) analysis indicates complete oxidation of the Zr metal. High resolution transmission electron microscopy (TEM) of UV-ozone oxidized ZrO2 on Ge indicates a sharp interface between the oxide and the substrate. However, conventional TEM is not well suited for identifying a Ge oxide layer in this system due to the closeness in atomic number of Zr and Ge. XPS spectra suggest the presence of a substoichiometric Ge oxide phase at the ZrO2/Ge interface. Depth profiling using angle-resolved XPS was performed on ZrO2/Ge gate stacks of varying oxide thickness. The results indicate that the amount of Ge oxide is dependent upon the ZrO2 overl...