An experimental study of high pressure synthesis of diamond films using a microwave cavity plasma reactor
An experimental study of high pressure synthesis of diamond films using a microwave cavity plasma reactor
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DOI：
10.1016/s0925-9635(97)00018-6
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发表时间：
1997-07-01
影响因子：
4.1
通讯作者：
Asmussen, J
中科院分区：
文献类型：
--
作者：
Kuo, KP;Asmussen, J
使用微波等离子盘反应器和 CH4/H-2 气体混合物在高压下对 Si“基准”基板上的金刚石薄膜沉积进行了实验研究。在该微波等离子体反应器中，等离子体在直径为 12.7 厘米的盘状放电区域内形成，该放电区域位于内部调谐的圆柱形腔体施加器的一端。采用水冷却台来控制基板温度。实验评估的输入变量为 (1) 甲烷浓度，表示为 c=%CH4/H-2，从 1 到 8%，(2) 总流量，f(t)，200 到 1400 sccm，(3) 基底温度 T-s，从 700 到 1125 摄氏度不等，(4) 沉积时间，t，5 到 100 h，(5) 压力，p，80 到 100 h。 140 吨，(6) 入射功率，P-inc，2 类似于 4.5 kW。沉积在 2 英寸直径基底上的输出薄膜的特征在于 (1) 生长速率（μ m/h 和 mg/h）、(2) 薄膜形态和 (3) 拉曼光谱。特别是薄膜生长速率与 CH4/H-2、流速、T-s 和 t 的关系是在均匀沉积的薄膜上进行的（
Diamond film deposition on Si ''benchmark'' substrates is experimentally investigated al high pressures using a microwave plasma disk reactor and CH4/H-2 gas mixtures. In this microwave plasma reactor the plasma is formed inside a 12.7 cm diameter disk-like discharge region located at one end of an internally tuned cylindrical cavity applicator. A water cooling stage is employed to control substrate temperature. The input variables of the experimental evaluation are (1) methane concentration, expressed as c=%CH4/H-2 from 1 similar to 8%, (2) total flow rate, f(t), 200 similar to 1400 sccm, (3) substrate temperature T-s which varies from 700 similar to 1125 degrees C, (4) deposition time, t, 5 similar to 100 h, (5) pressure, p, 80 similar to 140 Ton, (6) incident power, P-inc, 2 similar to 4.5 kW. The output films deposited on 2 in. diameter substrates were characterized by (1) growth rate in mu m/h and mg/h, (2) film morphology, and (3) Raman spectra. In particular film growth rate versus CH4/H-2, flow rate, T-s and t were performed on films deposited uniformly (