Disorder-induced phase transitions in two-dimensional crystals.
Disorder-induced phase transitions in two-dimensional crystals.
复制标题
二维晶体中无序诱导的相变。
DOI：
10.1103/physrevlett.74.4867
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发表时间：
1995
影响因子：
8.6
通讯作者：
H. Fertig
中科院分区：
文献类型：
--
作者：
Min;H. Fertig
我们分析了一个受缓慢变化随机电位影响的二维晶体模型，并通过在临界无序强度以上出现孤立位错，找到了零温度相变存在的证据。结果与先前的模型分析相反，该模型发现晶体在位错形成方面总是不稳定的。将该论点推广到有限温度下，并推导出相边界。模型电子晶体的分子动力学模拟显示了低温下这种相变的有力证据。
We analyze a model of a two-dimensional crystal subject to a slowly varying random potential, and find evidence for the existence of a zero-temperature phase transition via the appearance of isolated dislocations above a critical disorder strength. The result is in contrast to earlier analyses of the model, which found that the crystal is always unstable with respect to dislocation formation. The argument is generalized to finite temperature and a phase boundary is derived. Molecular dynamics simulations of a model electron crystal show strong evidence of this phase transition at low temperatures.