Enhancement mode operation in AlInN/GaN (MIS)HEMTs on Si substrates using a fluorine implant
Enhancement mode operation in AlInN/GaN (MIS)HEMTs on Si substrates using a fluorine implant
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DOI：
10.1088/0268-1242/30/10/105007
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发表时间：
2015-10-01
影响因子：
1.9
通讯作者：
Houston, P. A.
中科院分区：
文献类型：
--
作者：
Zaidi, Z. H.;Lee, K. B.;Houston, P. A.
我们已经使用氟处理技术演示了 AlInN/GaN (MIS) HEMT 在 Si 衬底上的增强模式操作。优化等离子体射频功率和处理时间，以防止氟渗透到沟道区域，以保持高沟道电导率和跨导。对阈值电压进行了分析，其定义了氟片浓度超过电介质/AlInN界面处的电荷的要求，以实现电介质沉积后正阈值电压的增加。这说明了控制等离子体条件和界面电荷对于可再现阈值电压的重要性。在 10 V 的正向栅极偏压下，可实现 +3 V 的正阈值电压，最大漏极电流为 367 mA mm(-1)。
We have demonstrated enhancement mode operation of AlInN/GaN (MIS) HEMTs on Si substrates using the fluorine treatment technique. The plasma RF power and treatment time was optimized to prevent the penetration of the fluorine into the channel region to maintain high channel conductivity and transconductance. An analysis of the threshold voltage was carried out which defined the requirement for the fluorine sheet concentration to exceed the charge at the dielectric/AlInN interface to achieve an increase in the positive threshold voltage after deposition of the dielectric. This illustrates the importance of control of both the plasma conditions and the interfacial charge for a reproducible threshold voltage. A positive threshold voltage of +3 V was achieved with a maximum drain current of 367 mA mm(-1) at a forward gate bias of 10 V.