First-order resonant Raman scattering under an electric field.
First-order resonant Raman scattering under an electric field.
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电场下的一阶共振拉曼散射。
DOI：
10.1103/physrevb.54.11492
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发表时间：
1996
期刊：
影响因子：
--
通讯作者：
Cantarero
中科院分区：
文献类型：
--
作者：
García;Kuball;Cardona;Cantarero
我们推导了电场作用下单LO声子拉曼散射效率的理论表达式。Fröhlich和变形势的电子-声子相互作用被认为是。计算的LO-声子拉曼强度显示振荡与电场的激发能量以上的基本间隙E 0。这些结果解释了最近报道的室温下GaAs中电场诱导拉曼散射的实验数据，以及这里提供的10 K下的额外数据。理论模型允许我们根据电子-声子相互作用的不同将不同的起源分配给电拉曼振荡：（a）在Fröhlich相互作用的情况下，重空穴和分裂带内过程的散射振幅之间的干涉，（B）在变形势相互作用的情况下，涉及轻空穴-重空穴带间跃迁的散射振幅。对于沿着[110]或[11 0]的平行偏振，观察到（a）和（B）散射振幅之间的干涉效应。© 1996美国物理学会。
We derive theoretical expressions for the efficiency of one-LO-phonon Raman scattering under the presence of an electric field. Both Fröhlich and deformation potential electron-phonon interactions are considered. The calculated LO-phonon Raman intensity shows oscillations vs electric field for excitation energies above the fundamental gap E 0. These results explain recently reported experimental data on electric-field-induced Raman scattering in GaAs obtained at room temperature, as well as additional data presented here which were taken at 10 K. The theoretical model allows us to assign different origins to the electro-Raman oscillations depending on the mediating electron-phonon interaction:(a) interference between the scattering amplitude for heavy-hole and split-off intraband processes in the case of Fröhlich interaction,(b) scattering amplitude involving the light-hole–heavy-hole interband transitions in the case of deformation potential interaction. For parallel polarizations along [110] or [11 0] interference effects between the (a) and (b) scattering amplitudes are observed.© 1996 The American Physical Society.