Effect of crystal orientation on ohmic contact formation for n-type gallium nitride
Effect of crystal orientation on ohmic contact formation for n-type gallium nitride
复制标题
晶体取向对n型氮化镓欧姆接触形成的影响
DOI：
10.1088/1757-899x/61/1/012033
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发表时间：
2014
期刊：
影响因子：
--
通讯作者：
M. Maeda and Y. Takahashi
中科院分区：
文献类型：
--
作者：
K. Kimura;Aiman b. M. H.;M. Maeda and Y. Takahashi
本文研究了n型GaN的表面取向对电学性能的影响以及退火过程中GaN与Ti之间的界面反应。虽然在GaN的（0001）Ga面上形成的接触在沉积状态下执行最高的电导，但即使在773 K的低温下退火，电导也显著劣化。大量的Ti-Ga金属间化合物在劣化界面处形成，这是劣化的原因。
The present paper describes the influence of surface orientation of n-type GaN on the electrical properties and the interfacial reaction between GaN and Ti during annealing. Although the contact formed on (0001) Ga-face of GaN performs the highest electrical conductance in the as-deposited state, the conductance deteriorates significantly by annealing even at a low temperature of 773 K. A considerable amount of Ti-Ga intermetallic compounds is formed at the deteriorated interfaces, to which the deterioration is attributed.