Steep Switching Hybrid Phase Transition FETs (Hyper-FET) for Low Power Applications: A Device-Circuit Co-design Perspective-Part I
Steep Switching Hybrid Phase Transition FETs (Hyper-FET) for Low Power Applications: A Device-Circuit Co-design Perspective-Part I
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DOI：
10.1109/ted.2016.2642884
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发表时间：
2017-03-01
影响因子：
3.1
通讯作者：
Gupta, Sumeet Kumar
中科院分区：
文献类型：
--
作者：
Aziz, Ahmedullah;Shukla, Nikhil;Gupta, Sumeet Kumar
混合相变FET(Hyper-FETs)是最近提出的一种陡峭开关器件，它利用相变材料(PTM)来提高导通(I-ON)和关断(I-OFF)的电流比。Hyper-FET的原型演示表明，与传统晶体管相比，性能有所改善，这促使人们对其器件电路设计空间进行评估。在第一部分中，我们分析了器件方面，确定了PTM的电阻率和相变阈值对超场效应晶体管特性的影响。我们的分析表明，PTM的绝缘态和金属态的电阻率(分别为Rho Ins和Rho Met)的比值需要高于其宿主晶体管的I-ON/IOFF，才能实现Hyper-FET的性能改进。对于I-OFF=0.051微安/微米和I-ON=191.5微安/微米的主机晶体管，Rho满足
Hybrid-phase-transition FETs (Hyper-FETs) are recently proposed steep switching devices that utilize the phase transition materials (PTM) to achieve a boost in the ratio of ON (I-ON) and OFF currents (I-OFF). Prototypical demonstrations of the Hyper-FET have shown performance improvement in comparison with conventional transistors, which motivates the evaluation of its device-circuit design space. In part I, we analyze the device aspects establishing the effects of the resistivity and phase transition thresholds of the PTM on the characteristics of Hyper-FETs. Our analysis shows that the ratio of insulating and metallic state resistivity (rho INS and rho MET, respectively) of the PTM needs to be higher than the I-ON/IOFF of its host transistor to achieve performance improvement in Hyper-FET. For a host transistor with I-OFF = 0.051 mu A/mu m and I-ON = 191.5 mu A/mu m, rho MET