Analysis of buffer-related lag phenomena and current collapse in GaN FETs
Analysis of buffer-related lag phenomena and current collapse in GaN FETs
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DOI：
10.1002/pssc.200674715
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发表时间：
2007-06
期刊：
影响因子：
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通讯作者：
K. Itagaki;N. Kobayashi;K. Horio
中科院分区：
文献类型：
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作者：
K. Itagaki;N. Kobayashi;K. Horio
计算了具有半绝缘缓冲层的GaN MESFET在漏极电压和栅极电压突变时的漏电流响应，得到了脉冲I-V曲线。结果表明，所谓的电流崩塌或电流骤降与栅长LG（0.3 μm - 1 μm）的关系不大，而主要由缓冲层中的深受主密度NDA决定。LG和NDA的门延迟的依赖性也进行了研究，表明门延迟是较弱的较长的LG和滞后率变得很高的NDA，虽然它可能会显示出饱和行为。（© 2007 WILEY-VCH Verlag GmbH & Co. KGaA，魏因海姆）
Drain-current responses of GaN MESFETs with a semi-insulating buffer layer are calculated when the drain voltage and/or the gate voltage are changed abruptly, and pulsed I-V curves are derived from them. It is shown that so-called current collapse or current slump is not so dependent on the gate length LG (0.3 μm – 1 μm), and this is essentially determined by a deep-acceptor density NDA in the buffer layer. LG and NDA dependence of gate lag is also studied, indicating that the gate lag is weaker for longer LG and the lag rate becomes high with NDA, although it may show a saturation behaviour. (© 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)