A ferromagnetic III-V semiconductor: (Ga,Mn)As
A ferromagnetic III-V semiconductor: (Ga,Mn)As
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DOI：
10.1016/s0038-1098(00)00436-1
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发表时间：
2001-01-01
影响因子：
2.1
通讯作者：
Matsukura, F
中科院分区：
文献类型：
--
作者：
Ohno, H;Matsukura, F
综述了铁磁性Ⅲ-Ⅴ族半导体（Ga，Mn）As的磁性和输运性质。直接磁化测量和磁性能从运输获得的结果进行了介绍和比较。讨论了铁磁性的起源和III-V族磁性半导体的发展前景。(C)2001爱思唯尔科技有限公司版权所有。
Magnetic and transport properties of ferromagnetic III-V semiconductor (Ga,Mn)As, an alloy between GaAs and transition element Mn, are reviewed. Results of direct magnetization measurements and magnetic properties obtained from transport are presented and compared. Origin of ferromagnetism and the prospects of magnetic III-V semiconductors are discussed. (C) 2001 Elsevier Science Ltd. All rights reserved.