Experiment on alleviating the bending of CVD-grown heavily Al-doped 4H-SiC epiwafer by codoping of N
Experiment on alleviating the bending of CVD-grown heavily Al-doped 4H-SiC epiwafer by codoping of N
复制标题
N共掺缓解CVD生长重掺Al 4H-SiC外延片弯曲的实验
DOI：
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发表时间：
2015
期刊：
影响因子：
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通讯作者：
H. Okumura
中科院分区：
文献类型：
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作者：
S. Ji;K. Kojima;Y. Ishida;S. Saito;H. Yamaguchi;S. Yoshida;H. Tsuchida;H. Okumura
为了减轻在 n+ 衬底上生长的重掺杂 4H-SiC 外延层上常见的凸晶圆弓，在 CVD 生长过程中有意引入氮气和 Al 掺杂气体，即 Al-N 共掺杂。结果发现，通过以不同的流速引入N2，掺入的N杂质的浓度随着供应的流速而增加，而Al杂质保持在相似的浓度。通过在 4H-SiC 中共掺杂 N 和 Al，可以显着减少晶圆弯曲。晶体结构测量表明，由于 p+ 外延层和 n+ 衬底之间的晶格常数差异减小，N 杂质的引入减轻了大晶圆弯曲。
In order to alleviate the convex wafer bow that commonly occurs on a heavily Al-doped 4H-SiC epilayer grown on an n+ substrate, nitrogen gas was intentionally introduced, together with an Al dopant gas during CVD growth, that is Al–N codoping. It was found that, by introducing N2 at various flow rates, the concentration of incorporated N impurity increases along with the supplied flow rate, while the Al impurity remains at a similar concentration. With the codoping of N and Al in 4H-SiC, a marked reduction of wafer bow has been achieved. The crystal structural measurement suggests that the introduction of N impurity alleviates the large wafer bow owing to the reduced lattice constant differences between the p+ epilayer and the n+ substrate.
影响因子：
2.3
作者：
T. Okuda;T. Miyazawa;H. Tsuchida;T. Kimoto;J. Suda
通讯作者：
T. Okuda;T. Miyazawa;H. Tsuchida;T. Kimoto;J. Suda