Irreversibility on the Level of Single-Electron Tunneling
Irreversibility on the Level of Single-Electron Tunneling
复制标题
DOI：
10.1103/physrevx.2.011001
复制
发表时间：
2012-01-13
影响因子：
12.5
通讯作者：
Ensslin, K.
中科院分区：
文献类型：
--
作者：
Kueng, B.;Roessler, C.;Ensslin, K.
本文对双量子点中电子输运的涨落定理进行了低温实验验证。利用量子点接触的时间分辨电荷检测技术，以单电荷流的形式检测到稀有的熵消耗系统轨迹。我们发现，这些轨迹出现的频率，同意与理论预测，即使在强非平衡条件下，当考虑到电荷检测的有限带宽。
We present a low-temperature experimental test of the fluctuation theorem for electron transport through a double quantum dot. The rare entropy-consuming system trajectories are detected in the form of single charges flowing against the source-drain bias by using time-resolved charge detection with a quantum point contact. We find that these trajectories appear with a frequency that agrees with the theoretical predictions even under strong nonequilibrium conditions, when the finite bandwidth of the charge detection is taken into account.