On the texturization of monocrystalline silicon with sodium carbonate solutions
On the texturization of monocrystalline silicon with sodium carbonate solutions
复制标题
DOI：
10.1016/j.solener.2007.02.002
复制
发表时间：
2007-05
期刊：
影响因子：
6.7
通讯作者：
B. Vallejo;M. González-Mañas;J. Martínez-López;M. A. Caballero
中科院分区：
文献类型：
--
作者：
B. Vallejo;M. González-Mañas;J. Martínez-López;M. A. Caballero
已经研究了使用碳酸钠溶液的单晶硅片的织构化。该蚀刻工艺已根据表面形态和反射率值进行了评估。结果表明，对于低浓度碳酸钠，随着织构时间的增加，反射率值降低，因为形貌由小丘状变为金字塔状；相反，对于中浓度和高浓度，时间的增加对组织化具有不利影响，因为它增加了金字塔尺寸及其不均匀分布。然而，通过高浓度和短时间的蚀刻可以获得良好的电池性能。
The texturization of monocrystalline silicon wafers using sodium carbonate solution has been investigated. This etching process has been evaluated in terms of the surface morphology and the reflectance value. The results show that for low concentration of sodium carbonate the increase of texturing time decreases the reflectance value because of the change in morphology from hillocks to pyramidal; on the contrary for intermediate and high concentrations the increase of time has a detrimental effect on texturization because it increases both the pyramid sizes and their non-uniform distribution. However, a good cell performance could be obtained by etching at high concentrations and short times.