Growth mechanism and optical properties of InGaAs/GaAsSb Su-perlattice structures
Growth mechanism and optical properties of InGaAs/GaAsSb Su-perlattice structures
复制标题
DOI：
10.1007/s11433-014-5601-3
复制
发表时间：
2015-04
期刊：
影响因子：
--
通讯作者：
Chuan Jin;Qingqing Xu;Jianxin Chen
中科院分区：
文献类型：
--
作者：
Chuan Jin;Qingqing Xu;Jianxin Chen
本文报道了不同Sb_2/As_2流量比和生长温度下GaAsSb晶体的生长及其晶体性质。采用非平衡热力学模型模拟了Sb 2和As 2的掺入差异。我们的研究GaAsSb的生长已经成功地产生了，高品质的InGaAs/GaAsSb II型超晶格的光学性质的特点是在不同的激发功率和温度下的光致发光。观察到发光峰能量随激发功率蓝移，并用非平衡载流子密度模型描述。测量并分析了峰值能量和积分强度随温度的变化关系。从强度依赖的光致发光测量观察到两个热过程。
In this paper, we report the growth of GaAsSb and its crystalline property under various Sb2/As2flux ratios and growth temperatures. We simulated the incorporation difference between Sb2and As2by using a non-equilibrium thermodynamic model. Our study of GaAsSb growth has successfully yielded, high quality InGaAs/GaAsSb Type II superlattice for which the optical properties were characterized by photoluminescence at different excitation power and temperature. A blue-shift in luminescence peak energy with excitation power was observed and was described by a non-equilibrium carrier density model. We measured and analyzed the dependences of peak energy and integrated intensity on temperature. Two thermal processes were observed from intensity dependent photoluminescence measurements.