Investigation of nanoscale Ge segregation in p-channel SiGe/Si field effect transistor structures by electron energy loss imaging
Investigation of nanoscale Ge segregation in p-channel SiGe/Si field effect transistor structures by electron energy loss imaging
复制标题
通过电子能量损失成像研究 p 沟道 SiGe/Si 场效应晶体管结构中的纳米级 Ge 偏析
DOI：
10.1063/1.371810
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发表时间：
1999
影响因子：
3.2
通讯作者：
E. Parker
中科院分区：
文献类型：
--
作者：
D. Norris;A. Cullis;T. Grasby;E. Parker
SiGe/Si p 沟道异质外延场效应晶体管测试结构采用分子束外延法制造。高分辨率透射电子显微镜和能量损失滤波成像相结合，已用于定量确定 SiGe 合金通道中的纳米级 Ge 分布。已经发现，由于Ge偏析，通道边缘的合金分级是不对称的，具有指向表面的指数状扩展分布。结果与偏析理论的预测非常吻合，并表明在距离通道体几纳米的距离上，扩展分布中Ge的浓度在10%–1%范围内。对相同样品的二次离子质谱测量对这种短程扩展的 Ge 分布不敏感。
SiGe/Si p-channel heteroepitaxial field effect transistor test structures in Si were fabricated by molecular beam epitaxy. Combined high-resolution transmission electron microscopy and energy-loss filtered imaging have been used to quantitatively determine the nanoscale Ge distribution across the SiGe alloy channel. The alloy grading at the edges of the channel has been found to be asymmetrical due to Ge segregation, with an exponential-like extended distribution directed towards the surface. The results agree well with the predictions of segregation theory and indicate that the concentration of Ge in the extended distribution lay in the range 10%–1% over a distance of several nanometers from the body of the channel. Secondary ion mass spectrometry measurements upon the same samples were insensitive to this short range extended Ge distribution.